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Fabrication and Characterization of Semiconductor Nanolasers

Abstract Semiconductor nanolasers, as a frontier subject has drawn a great deal of attention over the past decade. Semiconductor nanolasers are compatible with on-chip integrations towards the ultimate realization of photonic integrated circuits. However, innovative approaches are strongly required to overcome the limitation of lattice-mismatch issues. In this dissertation, two alternative approaches are employed to overcome the lattice-mismatch issues. i) By taking advantage of nanowires or nanobelts techniques, flexibility in bandgap engineering has been greatly expanded, resulting in the nanolasers with wide wavelength coverage and tunability. Simultaneous two-color lasing in green and red is firstly achieved from monolithic cadmium sulfide selen... (more)
Created Date 2016
Contributor Fan, Fan (Author) / Ning, Cun-Zheng (Advisor) / Balanis, Constantine A (Committee member) / Palais, Joseph C (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Optics / Membrane Transfer / Nanobelt / Nanolasers / Nanotechnology / Nanowire / Semiconductor Lasers
Type Doctoral Dissertation
Extent 159 pages
Language English
Reuse Permissions All Rights Reserved
Note Doctoral Dissertation Electrical Engineering 2016
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis