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Surface Potential Modelling of Hot Carrier Degradation in CMOS Technology

Abstract The scaling of transistors has numerous advantages such as increased memory density, less power consumption and better performance; but on the other hand, they also give rise to many reliability issues. One of the major reliability issue is the hot carrier injection and the effect it has on device degradation over time which causes serious circuit malfunctions.

Hot carrier injection has been studied from early 1980's and a lot of research has been done on the various hot carrier injection mechanisms and how the devices get damaged due to this effect. However, most of the existing hot carrier degradation models do not consider the physics involved in the degradation process and they just calculate the change in threshold voltage for dif... (more)
Created Date 2017
Contributor Muthuseenu, Kiraneswar (Author) / Barnaby, Hugh (Advisor) / Kozicki, Michael (Committee member) / Velo, Yago Gonzalez (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Physics / Hot Carrier Injection / Interface Traps / MOSFET / Surface Potential Method / TCAD Modelling
Type Masters Thesis
Extent 78 pages
Language English
Reuse Permissions All Rights Reserved
Note Masters Thesis Electrical Engineering 2017
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis