Skip to main content

Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping


Abstract In this work, we are showing that iron (Fe) related defects in mono-silicon have very different recombination characteristics depending on the doping element employed. While the defect characteristics of the Fe in its dissociated state is comparably the same in the materials of investigation, the defect characteristics of the associated state vary considerably. By using, defect parameter contour mapping (DPCM), a newly developed method for analyzing temperature and injection dependent lifetime data, we have for the first time, been able to show that in the case of gallium doping it is the orthorhombic state of the Fe-acceptor complex that is dominating the lifetime.
Created Date 2017-09-21
Contributor Naerland, Tine (ASU author) / Bernardini, Simone (ASU author) / Stoddard, Nathan (Author) / Good, Ethan (Author) / Augusto, Andre (Author) / Bertoni, Mariana (ASU author) / Ira A. Fulton Schools of Engineering / School of Electrical, Computer and Energy Engineering
Series ENERGY PROCEDIA
Type Text
Extent 8 pages
Language English
Identifier DOI: 10.1016/j.egypro.2017.09.321 / ISSN: 1876-6102
Copyright
Reuse Permissions
Citation Nærland, T. U., Bernardini, S., Stoddard, N., Good, E., Augusto, A., & Bertoni, M. (2017). Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping. Energy Procedia, 124, 138-145. doi:10.1016/j.egypro.2017.09.321
Collaborating Institutions ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


  Comparison of iron-related recombination_2017.pdf
1.1 MB application/pdf
Download Count: 132