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Accelerated Aging in Devices and Circuits

Abstract The aging mechanism in devices is prone to uncertainties due to dynamic stress conditions. In AMS circuits these can lead to momentary fluctuations in circuit voltage that may be missed by a compact model and hence cause unpredictable failure. Firstly, multiple aging effects in the devices may have underlying correlations. The generation of new traps during TDDB may significantly accelerate BTI, since these traps are close to the dielectric-Si interface in scaled technology. Secondly, the prevalent reliability analysis lacks a direct validation of the lifetime of devices and circuits. The aging mechanism of BTI causes gradual degradation of the device leading to threshold voltage shift and increasing the failure rate. In the 28nm HKMG techn... (more)
Created Date 2017
Contributor Patra, Devyani (Author) / Cao, Yu (Advisor) / Barnaby, Hugh (Advisor) / Seo, Jae-sun (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Accelerated Aging / Aging Models / Digital Circuits / End of Life / Reliability / VLSI
Type Masters Thesis
Extent 65 pages
Language English
Reuse Permissions All Rights Reserved
Note Masters Thesis Electrical Engineering 2017
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis