Skip to main content

High-mobility Hydrogenated Indium Oxide without Introducing Water During Sputtering

Abstract The key role of water to obtain high-mobility IO:H (hydrogenated indium oxide) layers has been well documented, but introducing the required tiny amount of water is technologically challenging. We first use simulations to evidence the key role of high mobility for the transparent conductive oxide for high-efficiency crystalline silicon solar cells. Then, we investigate an approach to fabricate high-mobility IO:H that circumvent the introduction of water vapor, relying on water vapor from ambient air. A sputtering tool equipped with a residual gas analyzer allows partial pressure monitoring of hydrogen and water in the system, and to link the gas composition to the properties of the deposited films. To vary the residual water pressure, we va... (more)
Created Date 2016-09-23
Contributor Boccard, Mathieu (ASU author) / Rodkey, Nathan (ASU author) / Holman, Zachary (ASU author) / Ira A. Fulton Schools of Engineering / School of Electrical, Computer and Energy Engineering
Type Text
Extent 7 pages
Language English
Identifier DOI: 10.1016/j.egypro.2016.07.083 / ISSN: 1876-6102
Reuse Permissions
Citation Boccard, M., Rodkey, N., & Holman, Z. C. (2016). High-mobility Hydrogenated Indium Oxide without Introducing Water During Sputtering. Energy Procedia, 92, 297-303. doi:10.1016/j.egypro.2016.07.083
Collaborating Institutions ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

  High-mobility Hydrogenated_2016.pdf
435.1 KB application/pdf
Download Count: 128