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Growth and Characterization of InGaAsP Alloy Nanowires with Widely Tunable Bandgaps for Optoelectronic Applications

Abstract The larger tolerance to lattice mismatch in growth of semiconductor nanowires (NWs) offers much more flexibility for achieving a wide range of compositions and bandgaps via alloying within a single substrate. The bandgap of III-V InGaAsP alloy NWs can be tuned to cover a wide range of (0.4, 2.25) eV, appealing for various optoelectronic applications such as photodetectors, solar cells, Light Emitting Diodes (LEDs), lasers, etc., given the existing rich knowledge in device fabrication based on these materials.

This dissertation explores the growth of InGaAsP alloys using a low-cost method that could be potentially important especially for III-V NW-based solar cells. The NWs were grown by Vapor-Liquid-Solid (VLS) and Vapor-Solid (VS) mechani... (more)
Created Date 2018
Contributor Hashemi Amiri, Seyed Ebrahim (Author) / Ning, Cun-Zheng (Advisor) / Petuskey, William (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Subject Chemistry / Materials Science / Engineering / Alloys / Bandgap / InGaAsP / Optoelectronics / Semiconductor Nanowires
Type Doctoral Dissertation
Extent 232 pages
Language English
Reuse Permissions All Rights Reserved
Note Doctoral Dissertation Chemistry 2018
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

This content is under embargo until May 07, 2020

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Description Dissertation/Thesis