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Particle-Based Modeling of Reliability for Millimeter-Wave GaN Devices for Power Amplifier Applications

Abstract In this work, an advanced simulation study of reliability in millimeter-wave (mm-wave) GaN Devices for power amplifier (PA) applications is performed by means of a particle-based full band Cellular Monte Carlo device simulator (CMC). The goal of the study is to obtain a systematic characterization of the performance of GaN devices operating in DC, small signal AC and large-signal radio-frequency (RF) conditions emphasizing on the microscopic properties that correlate to degradation of device performance such as generation of hot carriers, presence of material defects and self-heating effects. First, a review of concepts concerning GaN technology, devices, reliability mechanisms and PA design is presented in chapter 2. Then, in chapter 3 a s... (more)
Created Date 2018
Contributor Latorre Rey, Alvaro Daniel (Author) / Saraniti, Marco (Advisor) / Kitchen, Jennifer (Committee member) / Goodnick, Stephen M (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Electro - Thermal Effects / GaN Devices / HEMTs / Hot Electrons / Monte Carlo Methods / Reliability
Type Doctoral Dissertation
Extent 186 pages
Language English
Reuse Permissions All Rights Reserved
Note Doctoral Dissertation Electrical Engineering 2018
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis