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Characterization of Plasma-Enhanced Atomic Layer Deposited Ga2O3 using Ga(acac)3 On GaN

Abstract This research has studied remote plasma enhanced atomic layer deposited Ga2O3 thin films with gallium acetylacetonate (Ga(acac)3) as Ga precursor and remote inductively coupled oxygen plasma as oxidizer. The Ga2O3 thin films were mainly considered as passivation layers on GaN. Growth conditions including Ga(acac)3 precursor pulse time, O2 plasma pulse time, N2 purge time and deposition temperature were investigated and optimized on phosphorus doped Si (100) wafer to achieve a saturated self-limiting growth. A temperature growth window was observed between 150 ℃ and 320 ℃. Ga precursor molecules can saturate on the substrate surface in 0.6 s in one cycle and the plasma power saturates at 150 W. A growth rate of 0.31 Å/cycle was observed for... (more)
Created Date 2018
Contributor Hao, Mei (Author) / Nemanich, Robert J. (Advisor) / Ponce, Fernando (Committee member) / Chamberlin, Ralph (Committee member) / Chowdhury, Srabanti (Committee member) / Arizona State University (Publisher)
Subject Physics
Type Doctoral Dissertation
Extent 123 pages
Language English
Reuse Permissions All Rights Reserved
Note Doctoral Dissertation Physics 2018
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis