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Microstructure of BAlN and InGaN Epilayers for Optoelectronic Applications


Abstract In this dissertation, various characterization techniques have been used to investigate many aspects of the properties of III-nitride materials and devices for optoelectronic applications.

The first part of this work is focused on the evolution of microstructures of BAlN thin films. The films were grown by flow-modulated epitaxy at 1010 oC, with B/(B+Al) gas-flow ratios ranging from 0.06 to 0.18. The boron content obtained from X-ray diffraction (XRD) patterns ranges from x = 0.02 to 0.09, while Rutherford backscattering spectrometry (RBS) measures x = 0.06 to 0.16. Transmission electron microscopy indicates the sole presence of the wurtzite crystal structure in the BAlN films, and a tendency towards twin formation and finer microstructur... (more)
Created Date 2018
Contributor Wang, Shuo (Author) / Ponce, Fernando A (Advisor) / Menendez, Jose (Committee member) / Rez, Peter (Committee member) / McCartney, Martha (Committee member) / Arizona State University (Publisher)
Subject Materials Science / Physics / Applied physics / Characterization / Crystal structure / Nitrides / Optoelectronics / Semiconductor / Transmission electron microscopy
Type Doctoral Dissertation
Extent 98 pages
Language English
Copyright
Note Doctoral Dissertation Physics 2018
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis