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Expanding the Optical Capabilities of Germanium in the Infrared Range Through Group IV and III-V-IV Alloy Systems

Abstract The work described in this thesis explores the synthesis of new semiconductors in the Si-Ge-Sn system for application in Si-photonics. Direct gap Ge1-ySny (y=0.12-0.16) alloys with enhanced light emission and absorption are pursued. Monocrystalline layers are grown on Si platforms via epitaxy-driven reactions between Sn- and Ge-hydrides using compositionally graded buffer layers that mitigate lattice mismatch between the epilayer and Si platforms. Prototype p-i-n structures are fabricated and are found to exhibit direct gap electroluminescence and tunable absorption edges between 2200 and 2700 nm indicating applications in LEDs and detectors. Additionally, a low pressure technique is described producing pseudomorphic Ge1-ySny alloys in the ... (more)
Created Date 2018
Contributor Wallace, Patrick Michael (Author) / Kouvetakis, John (Advisor) / Menendez, Jose (Committee member) / Trovitch, Ryan (Committee member) / Arizona State University (Publisher)
Subject Chemistry / Materials Science / Physics / germanium / germanium tin / GeSn / group IV / III-V-IV / semiconductor
Type Doctoral Dissertation
Extent 192 pages
Language English
Note Doctoral Dissertation Chemistry 2018
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis