Characterization of Electrically Active Defects at Nb/Si Interface Using Current Transport and Transient Capacitance Measurements
|Abstract||In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the depletion region, and (c) use thermal processing to reduce the concentration or eliminate the defects. Barrier height determinations using temperature-dependent I-V measurements indicate that the barrier height decreases from 0.50 eV to 0.48 eV for anneals above 200 C. The electrically-active defect concentration measured using DLTS (deep level transient spectroscopy) drops markedly after anneals at 250 C.
A significant increase in leakage currents is ... (more)
|Contributor||Krishna Murthy, Madhu (Author) / Newman, Nathan (Advisor) / Goryll, Michael (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)|
|Subject||Materials Science / Engineering / Defect characterization / DLTS / Nb/Si|
|Note||Masters Thesis Materials Science and Engineering 2018|
|Collaborating Institutions||Graduate College / ASU Library|
|Additional Formats||MODS / OAI Dublin Core / RIS|