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Simulation of GaN CAVETs in Silvaco Atlas


Abstract Gallium Nitride (GaN) based Current Aperture Vertical Electron Transistors (CAVETs) present many appealing qualities for applications in high power, high frequency devices. The wide bandgap, high carrier velocity of GaN make it ideal for withstanding high electric fields and supporting large currents. The vertical topology of the CAVET allows for more efficient die area utilization, breakdown scaling with the height of the device, and burying high electric fields in the bulk where they will not charge interface states that can lead to current collapse at higher frequency.

Though GaN CAVETs are promising new devices, they are expensive to develop due to new or exotic materials and processing steps. As a result, the accurate simulation of Ga... (more)
Created Date 2019
Contributor Warren, Andrew (Author) / Vasileska, Dragica (Advisor) / Goodnick, Stephen (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Atlas / CAVET / GaN / Silvaco / Simulation
Type Masters Thesis
Extent 60 pages
Language English
Copyright
Note Masters Thesis Electrical Engineering 2019
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis