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CMOS MESFET Cascode Amplifiers for RFIC Applications

Abstract There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal... (more)
Created Date 2019
Contributor HabibiMehr, Payam (Author) / Thornton, Trevor John (Advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Engineering / Nanotechnology / 5G / CMOS / MESFET / Power Amplifier / RFIC / Trap rich
Type Doctoral Dissertation
Extent 153 pages
Language English
Note Doctoral Dissertation Electrical Engineering 2019
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis