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Molecular beam epitaxial growth of monocrystalline MgxCd1-xTe/MgyCd1-yTe (x<y) double heterostructures and solar cells

Abstract This dissertation details a study of wide-bandgap molecular beam epitaxy (MBE)-grown single-crystal MgxCd1-xTe. The motivation for this study is to open a pathway to reduced $/W solar power generation through the development of a high-efficiency 1.7-eV II-VI top cell current-matched to low-cost 1.1-eV silicon. This paper reports the demonstration of monocrystalline 1.7-eV MgxCd1-xTe/MgyCd1-yTe (y>x) double heterostructures (DHs) with a record carrier lifetime of 560 nanoseconds, along with a 1.7-eV MgxCd1-xTe/MgyCd1-yTe (y>x) single-junction solar cell with a record active-area efficiency of 15.2% and a record open-circuit voltage (VOC) of 1.176 V. A study of indium-doped n-type 1.7-eV MgxCd1-xTe with a carrier activation of up to 5 ... (more)
Created Date 2019
Contributor Campbell, Calli Michele (Author) / Zhang, Yong-Hang (Advisor) / Chan, Candance K (Committee member) / King, Richard R (Committee member) / Arizona State University (Publisher)
Subject Materials Science / Electrical engineering / Social work
Type Doctoral Dissertation
Extent 134 pages
Language English
Note Doctoral Dissertation Materials Science and Engineering 2019
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis