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Design, Growth, and Characterization of III-Sb and III-N Materials for Photovoltaic Applications

Abstract Photovoltaic (PV) energy has shown tremendous improvements in the past few decades showing great promises for future sustainable energy sources. Among all PV energy sources, III-V-based solar cells have demonstrated the highest efficiencies. This dissertation investigates the two different III-V solar cells with low (III-antimonide) and high (III-nitride) bandgaps.

III-antimonide semiconductors, particularly aluminum (indium) gallium antimonide alloys, with relatively low bandgaps, are promising candidates for the absorption of long wavelength photons and thermophotovoltaic applications. GaSb and its alloys can be grown metamorphically on non-native substrates such as GaAs allowing for the understanding of different multijunction solar cel... (more)
Created Date 2019
Contributor Vadiee, Ehsan (Author) / Honsberg, Christiana B (Advisor) / Doolittle, William A (Advisor) / Arizona State University (Publisher)
Subject Engineering / III-N / III-Sb / nitride / Solar Cell / Tunnel junciton / wide bandgap
Type Doctoral Dissertation
Extent 190 pages
Language English
Note Doctoral Dissertation Electrical Engineering 2019
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis