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Exploration of the Cold-Wall CVD Synthesis of Monolayer MoS2 and WS2

Abstract A highly uniform and repeatable method for synthesizing the single-layer transition metal dichalcogenides (TMDs) molybdenum disulfide, MoS2, and tungsten disulfide, WS2, was developed. This method employed chemical vapor deposition (CVD) of precursors in a custom built cold-wall reaction chamber designed to allow independent control over the growth parameters. Iterations of this reaction chamber were employed to overcome limitations to the growth method. First, molybdenum trioxide, MoO3, and S were co-evaporated from alumina coated W baskets to grow MoS2 on SiO2/Si substrates. Using this method, films were found to have repeatable coverage, but unrepeatable morphology. Second, the reaction chamber was modified to include a pair of custom bu... (more)
Created Date 2019
Contributor Lunceford, Chad (Author) / Drucker, Jeff (Advisor) / Menendez, Jose (Committee member) / Smith, David J (Committee member) / Rez, Peter (Committee member) / Arizona State University (Publisher)
Subject Materials Science / 2D Materials / Chemical Vapor Deposition / Molybdenum Disulfide / Semiconductor / Transition Metal Dichalcogenide / Tungsten Disulfide
Type Doctoral Dissertation
Extent 199 pages
Language English
Note Doctoral Dissertation Physics 2019
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis