Skip to main content

Modeling Towards Lattice-Matched Dilute Nitride GaNPAs on Silicon Multijunction Solar Cells


Abstract Silicon photovoltaics is the dominant contribution to the global solar energy production. As increasing conversion efficiency has become one of the most important factors to lower the cost of photovoltaic systems, the idea of making a multijunction solar cell based on a silicon bottom cell has attracted broad interest. Here the potential of using dilute nitride GaNPAs alloys for a lattice-matched 3-terminal 2-junction Si-based tandem solar cell through multiscale modeling is investigated. To calculate the electronic band structure of dilute nitride alloys with relatively low computational cost, the sp^3 d^5 s^* s_N tight-binding model is chosen, as it has been demonstrated to obtain quantitatively correct trends for the lowest conduction ba... (more)
Created Date 2019
Contributor Zou, Yongjie (Author) / Goodnick, Stephen M. (Advisor) / Honsberg, Christiana B. (Committee member) / King, Richard R. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Subject Electrical engineering / Materials Science / Energy / Dilute nitride / Lattice-matched / Modeling / Multijunction solar cells / Silicon / Tandem
Type Doctoral Dissertation
Extent 114 pages
Language English
Copyright
Note Doctoral Dissertation Electrical Engineering 2019
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


This content is under embargo until Aug 01, 2021

  Full Text
2.9 MB application/pdf
  • Download restricted
Download Count: 0

Description Dissertation/Thesis