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Effects of Low-Temperature Operation on the Performance of MOSFETs


Abstract The existing compact models can reproduce the characteristics of MOSFETs in the temperature range of -40oC to 125oC. Some applications require circuits to operate over a wide temperature range consisting of temperatures below the specified range of existing compact models, requiring wide temperature range compact models for the design of such circuits. In order to develop wide temperature range compact models, fourteen different geometries of n-channel and p-channel MOSFETs manufactured in a 0.18μm mixed-signal process were electrically characterized over a temperature range of 40 K to 298 K. Electrical characterization included ID-VG and ID-VD under different drain, body and gate biases respectively. The effects of low-temperature o... (more)
Created Date 2010
Contributor Kathuria, Achal (Author) / Barnaby, Hugh (Advisor) / Schroder, Dieter K (Committee member) / Vermeire, Bert (Committee member) / Arizona State University (Publisher)
Subject Engineering, Electronics and Electrical / Linearity / Low-temperature / MOSFET
Type Masters Thesis
Extent 76 pages
Language English
Copyright
Reuse Permissions All Rights Reserved
Note M.S. Electrical Engineering 2010
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis