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Kinetics of Programmable Metallization Cell Memory

Abstract Programmable Metallization Cell (PMC) technology has been shown to possess the necessary qualities for it to be considered as a leading contender for the next generation memory. These qualities include high speed and endurance, extreme scalability, ease of fabrication, ultra low power operation, and perhaps most importantly ease of integration with the CMOS back end of line (BEOL) process flow. One area where detailed study is lacking is the reliability of PMC devices. In previous reliability work, the low and high resistance states were monitored for periods of hours to days without any applied voltage and the results were extrapolated to several years (>10) but little has been done to analyze the low resistance state under stress. With... (more)
Created Date 2011
Contributor Kamalanathan, Deepak (Author) / Kozicki, Dr. Michael (Advisor) / Schroder, Dr. Dieter (Committee member) / Goryll, Dr. Michael (Committee member) / Alford, Dr. Terry (Committee member) / Arizona State University (Publisher)
Subject Electrical Engineering / CBRAM / Nanoionic / nonvolatile memory / PMC / RRAM
Type Doctoral Dissertation
Extent 140 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Electrical Engineering 2011
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis