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Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors

Abstract III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced over the past decade. But the progress of green emission light emitting devices has been limited by the incorporation of indium in the alloy, mainly due to phase separation. This difficulty could be addressed by studying the growth and thermodynamics of these alloys. Knowledge of thermodynamic phase stabilities and of pressure - temperature - composition phase diagrams is important for an understanding of the boundary conditions of a variety of growth techniques. In this dissertation a study of the phase se... (more)
Created Date 2011
Contributor Hill, Arlinda (Author) / Ponce, Fernando A (Advisor) / Chamberlin, Ralph V (Committee member) / Sankey, Otto F (Committee member) / Smith, David J (Committee member) / Tsen, Kong-Thon (Committee member) / Arizona State University (Publisher)
Subject Physics / Materials Science / III nitrides / Semiconductors / thermodynamics
Type Doctoral Dissertation
Extent 126 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Physics 2011
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis