Skip to main content

Investigation of Light Absorption and Emission in Ge and GeSn Films Grown on Si Substrates

Abstract Ge1-ySny alloys represent a new class of photonic materials for integrated optoelectronics on Si. In this work, the electrical and optical properties of Ge1-ySny alloy films grown on Si, with concentrations in the range 0 ≤ y ≤ 0.04, are studied via a variety of methods. The first microelectronic devices from GeSn films were fabricated using newly developed CMOS-compatible protocols, and the devices were characterized with respect to their electrical properties and optical response. The detectors were found to have a detection range that extends into the near-IR, and the detection edge is found to shift to longer wavelengths with increasing Sn content, mainly due to the compositional dependence of the direct band gap E0.... (more)
Created Date 2011
Contributor Mathews, Jay (Author) / Menéndez, José (Advisor) / Kouvetakis, John (Advisor) / Drucker, Jeffery (Committee member) / Chizmeshya, Andrew (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Subject Physics / Materials Science / Electrical Engineering / detectors / germanium / lasers / luminescence / optoelectronics / photonics
Type Doctoral Dissertation
Extent 222 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Physics 2011
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

  Full Text
12.0 MB application/pdf
Download Count: 1910

Description Dissertation/Thesis