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Modeling of Total Ionizing Dose Effects in Advanced Complementary Metal-Oxide-Semiconductor Technologies

Abstract The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mecha... (more)
Created Date 2011
Contributor Sanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Advisor) / Schroder, Dieter (Advisor) / Barnaby, Hugh J (Committee member) / Schroder, Dieter K (Committee member) / Holbert, Keith E (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Subject Electrical Engineering / Physics / CMOS / Dose / Microelectronics / Radiation / Semiconductor / Transistor
Type Doctoral Dissertation
Extent 179 pages
Language English
Reuse Permissions All Rights Reserved
Note Ph.D. Electrical Engineering 2011
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS

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Description Dissertation/Thesis