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Enhanced Performance in Quantum Dot Solar Cell with TiOx and N2 Doped TiOx Interlayers


Abstract As the 3rd generation solar cell, quantum dot solar cells are expected to outperform the first 2 generations with higher efficiency and lower manufacture cost. Currently the main problems for QD cells are the low conversion efficiency and stability. This work is trying to improve the reliability as well as the device performance by inserting an interlayer between the metal cathode and the active layer. Titanium oxide and a novel nitrogen doped titanium oxide were compared and TiOxNy capped device shown a superior performance and stability to TiOx capped one. A unique light anneal effect on the interfacial layer was discovered first time and proved to be the trigger of the enhancement of both device reliability and efficiency. The efficiency... (more)
Created Date 2011
Contributor Yu, Jialin (Author) / Jabbour, Ghassan E (Advisor) / Alford, Terry L (Advisor) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Subject Materials Science / nitrigen doped / quantum dot / solar cell / titanium oxide
Type Masters Thesis
Extent 87 pages
Language English
Copyright
Reuse Permissions All Rights Reserved
Note M.S. Materials Science and Engineering 2011
Collaborating Institutions Graduate College / ASU Library
Additional Formats MODS / OAI Dublin Core / RIS


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Description Dissertation/Thesis